4.7 Article

Advanced composites based on end-capped polyarylene ether nitrile/bisphthalonitrile with controllable thermal curing reaction

期刊

POLYMER
卷 245, 期 -, 页码 -

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.polymer.2022.124695

关键词

Polyarylene ether nitrile; Bisphthalonitrile; Crosslinking; High temperature resistance; Composite materials

资金

  1. National Natural Science Foundation of China [51903029, 52073039, 51773028]
  2. Major Special Projects of Sichuan Province [2019ZDZX0027, 2019ZDZX0016]

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A novel polymer was prepared by combining phthalonitrile end-capped polyarylene ether nitrile (PEN-Ph) and bisphthalonitrile (BPh) using post-solid phase chemical reaction technology. The mechanical properties of the PEN-Ph/BPh composite materials were significantly improved by changing the pre-polymerization time of BPh. Furthermore, the composite films exhibited excellent thermal properties and dielectric stability, making them suitable for use in high-temperature electronic fields.
A novel polymer was prepared through the combination of phthalonitrile end-capped polyarylene ether nitrile (PEN-Ph) and bisphthalonitrile (BPh), applying post-solid phase chemical reaction technology. BPh monomer was firstly pre-polymerized to form BPh prepolymer and then followed by crosslinking reaction with PEN-Ph matrix resin to obtain PEN-Ph/BPh composites. The generated crosslinking structures were confirmed by FTIR and UV including phthalocyanine, triazine, and isoindoline rings. Besides, the effect of BPh pre-polymerization time on the performance of PEN-Ph/BPh composite materials was studied. Tensile strength and modulus highest values of composites exceeded 98.9 MPa and 2.17 GPa respectively as BPh pre-polymerization time reached 30 min, improved by 55.6% and 36.9% in comparison with unpolymerized one. Besides, PEN-Ph/BPh composite films exhibited superior thermal properties (T-g: 278-330 degrees C, T-5% (decomposition temperature of 5 wt%)>500 degrees C) and maintained excellent dielectric stability over 300 degrees C, leading to use for electronic fields at elevated temperature.

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