Field-effect transistors with vacuum-deposited organic-inorganic perovskite films as semiconductor channels

Films of the organic-inorganic layered perovskite (C6H5C2H4NH3)(2)SnI4 were vacuum-deposited on substrates heated at various temperatures (T-sub) to investigate the influence of T-sub on their film quality and transistor performance (hole mobilities, threshold voltages, and current on/off ratios). Appropriate substrate heating at T-sub = 60 degrees C during vacuum deposition led to better-developed perovskite films with larger grains. These films exhibited the best transistor performance in comparison with films fabricated at the other T-sub. The transistor performance was further enhanced by reducing perovskite semiconductor thickness (t) because of a reduction of bulk resistance in a top-contact/bottom-gate transistor structure. By utilizing the optimized T-sub of 60 degrees C and t of 31 nm, we obtained the most improved hole mobility of 0.78 +/- 0.24 cm(2)/V s, about 5000 times the hole mobilities of our initial transistors fabricated at T-sub = 24 degrees C and t = 50 nm. Published by AIP Publishing.