期刊
JOURNAL OF APPLIED PHYSICS
卷 119, 期 2, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4939647
关键词
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资金
- U.S. Department of Energy, Office of Defense Nuclear Nonproliferation Research and Development, DNN RD
- U.S. Department of Homeland Security, Domestic Nuclear Detection Office [2012-DN-077-ARI065-03]
In this research, we assessed the abundance of point defects and their influence on the resistivity, the electron mobility-lifetime (mu tau(e)) product, and the electron trapping time in CdTeSe crystals grown under different conditions using the traveling heater method. We used current-deep level transient spectroscopy to determine the traps' energy, their capture cross-section, and their concentration. Further, we used these data to determine the trapping and de-trapping times for the charge carriers. The data show that detectors with a lower concentration of In-dopant have a higher density of A-centers and Cd double vacancies (V-Cd(-)). The high concentrations of V-Cd(-) and A-centers, along with the deep trap at 0.86 eV and low density of 1.1 eV energy traps, are the major cause of the detectors' low resistivity, and most probably, a major contributor to the low mu tau(e) product. Our results indicate that the energy levels of point defects in the bandgap, their concentrations, capture cross-sections, and their trapping and de-trapping times play an important role in the detector's performance, especially for devices that rely solely on electron transport. (C) 2016 AIP Publishing LLC.
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