High-performance monolayer or bilayer SiC short channel transistors with metallic 1T-phase MoS2 contact

In this paper, high-performance monolayer or bilayer SiC short channel transistors with metallic 1T-Phase MoS2 contact have been proposed and investigated by using ab initio simulations. The results show that monolayer or bilayer SiC Schottky-barrier field-effect transistors (SBFET) could conquer the short channel effect, even if the channel length is reduced to 4.1 nm. The p-type ON-currents of monolayer SiC-SBFET, bilayer AB-stacked SiC-SBFET, and bilayer AA-stacked SiC-SBFET are 1132 mu A/mu m, 980 mu A/mu m, and 1457 mu A/mu m, respectively. The all could satisfy the requirement of the high-performance transistor outlined by International Technology Roadmap for Semiconductors (ITRS, 2013 version) for production year 2028. However, the n-type ON-currents of above SiC-SBFETs are 35 mu A/mu m, 21 mu A/mu m, and 229 mu A/mu m, which are much lower than that of p-type ON-currents. Comparing spectral current and spatial local density of states are used to explore the great differences between the p-type and n-type ON-currents.(C) 2022 Elsevier B.V. All rights reserved.

Automated summary

In this paper, high-performance monolayer or bilayer SiC short channel transistors with metallic 1T-Phase MoS2 contact are proposed and investigated using ab initio simulations. The results show that monolayer or bilayer SiC Schottky-barrier field-effect transistors (SBFET) can overcome the short channel effect, even with a reduced channel length of 4.1 nm. The p-type ON-currents of the SiC-SBFETs meet the requirements of high-performance transistors outlined by ITRS for production year 2028, while the n-type ON-currents are much lower. Spectral current and spatial local density of states are compared to explore the differences between the p-type and n-type ON-currents.