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Comment on Mechanisms for Pressure-Induced Isostructural Phase Transitions in EuO

PHYSICAL REVIEW LETTERS (2022)

Mechanisms for Pressure-Induced Isostructural Phase Transitions in EuO

Jacques K. Desmarais et al.

Summary: The pressure-induced isostructural electronic phase transitions in EuO were studied using global-hybrid density functional theory, revealing an insulator-to-metal transition at 12 GPa and a second transition at 30-35 GPa associated with changes in the occupation of Eu d orbitals. The abrupt depopulation of e(g) symmetry orbitals along the Eu-O direction was identified as a means to alleviate electron-electron repulsion in the highly compressed structures.

PHYSICAL REVIEW LETTERS (2021)

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Article Chemistry, Physical

Crystal-Field Theory Validity Through Local (and Bulk) Compressibilities in CoF2 and KCoF3

J. Antonio Barreda-Argueso et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2016)

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Article Materials Science, Multidisciplinary

Electronic structure, local magnetism, and spin-orbit effects of Ir(IV)-, Ir(V)-, and Ir(VI)-based compounds

M. A. Laguna-Marco et al.

PHYSICAL REVIEW B (2015)

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Article Physics, Multidisciplinary

Reentrant Valence Transition in EuO at High Pressures: Beyond the Bond-Valence Model

N. M. Souza-Neto et al.

PHYSICAL REVIEW LETTERS (2012)

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Article Physics, Multidisciplinary

Pressure-Induced Electronic Mixing and Enhancement of Ferromagnetic Ordering in EuX (X = Te, Se, S, O) Magnetic Semiconductors

Narcizo M. Souza-Neto et al.

PHYSICAL REVIEW LETTERS (2009)

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Comment on Mechanisms for Pressure-Induced Isostructural Phase Transitions in EuO

相关参考文献

Mechanisms for Pressure-Induced Isostructural Phase Transitions in EuO

Crystal-Field Theory Validity Through Local (and Bulk) Compressibilities in CoF2 and KCoF3

Electronic structure, local magnetism, and spin-orbit effects of Ir(IV)-, Ir(V)-, and Ir(VI)-based compounds

Reentrant Valence Transition in EuO at High Pressures: Beyond the Bond-Valence Model

Pressure-Induced Electronic Mixing and Enhancement of Ferromagnetic Ordering in EuX (X = Te, Se, S, O) Magnetic Semiconductors

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