Synthesis and characterization of vanadium pentoxide nanospheres by pulsed laser deposition: Effect of laser ablated energy on photodetectors properties

This paper introduces vanadium pentoxide films that were grown under the different laser pulse energy (440,640 and 840) mJ/pulse deposition conditions in order to observe the impact on the structural, optical, morphology, and electric properties and to specify the optimum condition. V2O5 nanospheres (V(2)O(5)NSs) are synthesized on porous silicon n-type Si (100) by pulsed laser deposition (PLD) method at room temperature. Q-switching Nd: YAG laser 1064 nm and the pulse duration of 10 ns and a repetition rate of 1 Hz use in the ablation process. X-ray diffraction (XRD), photoluminescence (PL), Raman spectroscopy, and field emission-scanning electron microscope (FE-SEM) were used to undertake structural and optical analysis. The findings the indicated that as-deposited films crystallized well in 840 mJ, in comparison to other forms of laser pulse energy. Photoluminescence spectra reveal intense and broad green light emission with a high intensity at around 545 nm. The PL intensity with an energy gap of the V(2)O(5)NSs (2.26, 2.27, and 2.28) eV with different laser pulse energies (440,640 and 840) mJ/pulse, respectively has been noted. Electrical properties determined from the current-voltage characteristics and Photocurrent density - voltage of Al/V(2)O(5)NPs/PS/n-Si/Al. The results showed that detectivity improves as laser pulse energy increases, 80% quantum efficiency was achieved in 840 mJ/pulse laser ablated energy. The results indicate that V(2)O(5)NSs are a promising candidate for high-performance photodetector applications in optoelectronics.

Automated summary

This paper introduces vanadium pentoxide films grown under different laser pulse energy conditions and investigates their impact on structural, optical, morphology, and electric properties. The study finds that films deposited with 840 mJ pulse energy exhibit good crystallization and intense green light emission at around 545 nm. The electrical properties also improve with increasing laser pulse energy.