4.6 Article

Interplay of sidewall damage and light extraction efficiency of micro-LEDs

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Nanoscience & Nanotechnology

Surface Recombinations in III-Nitride Micro-LEDs Probed by Photon-Correlation Cathodoluminescence

Sylvain Finot et al.

Summary: III-Nitride micro-LEDs are crucial for high performance microdisplays, with the need to achieve small-sized micro-LEDs for high pixel density. Research shows that combining KOH treatment and Al2O3 passivation layer significantly reduces surface recombinations, highlighting the importance of nanoscale timeresolved experiments to quantify changes in internal quantum efficiency of microdevices.

ACS PHOTONICS (2022)

Article Nanoscience & Nanotechnology

Understanding the Sidewall Passivation Effects in AlGaInP/GaInP Micro-LED

Juhyuk Park et al.

Summary: The effects of sulfur treatment and Al2O3 passivation on AlGaInP/GaInP red micro-light-emitting diodes (LEDs) were investigated. Passivation was found to enhance the external quantum efficiency (EQE) and shift the peak EQE to a lower current density region. However, the current density-voltage property was shown to be inadequate in reflecting the minor changes in electrical properties due to passivation.

NANOSCALE RESEARCH LETTERS (2022)

Article Physics, Applied

Efficiency degradation induced by surface defects-assisted tunneling recombination in GaN/InGaN micro-light-emitting diodes

Jian Yin et al.

Summary: The experimental results show that surface defects play an important role in GaN/InGaN micro-LEDs, with temperature and voltage affecting tunneling current. Some potential approaches to suppress surface defects are proposed and a revised external quantum efficiency model is introduced.

APPLIED PHYSICS LETTERS (2021)

Review Physics, Applied

MicroLED technologies and applications: characteristics, fabrication, progress, and challenges

Zhen Chen et al.

Summary: This paper categorizes, reviews, and analyzes the main challenges and technical solutions in the microLED displays manufacturing process, covering epitaxial growth, wafer fabrication, mass transfer, control circuit, and panel. The paper discusses the unique characteristics and challenges of microLED manufacturing, as well as the comparison with traditional displays and various applications.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)

Article Materials Science, Multidisciplinary

Role of Intrinsic Surface States in Efficiency Attenuation of GaN-Based Micro-Light-Emitting-Diodes

Fulong Jiang et al.

Summary: The study found that intrinsic nonpolar surfaces have a significant impact on the internal quantum efficiency of mu-LEDs smaller than 30 micrometers, while devices larger than 30 micrometers are relatively unaffected. As device size decreases, efficiency loss and peak current density shifting to higher values are observed in mu-LEDs, starting from 10 micrometers.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2021)

Article Multidisciplinary Sciences

Enhancement in external quantum efficiency of AlGaInP red μ-LED using chemical solution treatment process

Byung Oh Jung et al.

Summary: The external quantum efficiencies of extremely small red AlGaInP micro light emitting diodes (μLED) were improved by using a diluted hydrofluoric acid surface etch treatment. The improvement was attributed to the suppression of non-radiative recombination from surface damage and the enhancement of light extraction from sidewalls. Chemical treatment using diluted HF acid can effectively enhance the performance of μLEDs.

SCIENTIFIC REPORTS (2021)

Article Multidisciplinary Sciences

On the mechanism of carrier recombination in downsized blue micro-LEDs

Po-Wei Chen et al.

Summary: The mechanism of carrier recombination in downsized mu-LED chips was investigated, showing that the smallest chip size exhibited the highest ideality factor due to carrier recombination in high-defect-density zones. The use of a passivation layer and a maskless technology improved the performance and efficiency of the mu-LED chips. The blue-shift phenomenon in the electroluminescence spectrum was attributed to carrier screening and band filling effects, with high EQE values observed in the high current density region for the 10 x 10 μm(2) mu-LED chip.

SCIENTIFIC REPORTS (2021)

Review Optics

Micro-Light Emitting Diode: From Chips to Applications

Peter J. Parbrook et al.

Summary: The article presents the principles and applications of micro-LED technology, discussing the implications of reduced LED size in necessitating mitigation strategies for nonradiative device edge damage and the potential for higher drive current densities.

LASER & PHOTONICS REVIEWS (2021)

Article Optics

Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses

Jinjoo Park et al.

Summary: Tailored ion implantation (TIIP) has been used to fabricate highly efficient, electrically-driven pixelated InGaN micro-LEDs (mu LEDs) at the mid-submicrometre scale, achieving 8,500 pixels per inch (ppi) (RGB). This technology allows for relatively invariant luminance and high pixel distinctiveness, paving the way for high-performance mu LED displays.

NATURE PHOTONICS (2021)

Article Optics

Enhanced microLED efficiency via strategic pGaN contact geometries

Keith Behrman et al.

Summary: The study suggests that increasing the microLED die size can improve power output efficiency, while different contact sizes have optimal effects on power output at different current densities. In addition, larger contact sizes can resist efficiency losses under high-current injection, and a balance should be struck between reducing efficiency losses and preventing surface losses at high current densities.

OPTICS EXPRESS (2021)

Article Physics, Applied

Long-Range Carrier Diffusion in (In,Ga)N Quantum Wells and Implications from Fundamentals to Devices

Aurelien David

Summary: Research has shown that carriers in high-quality (In, Ga)N quantum wells can laterally diffuse to long distances, up to tens of microns at room temperature, which contrasts with the common expectation of a short diffusion length. This behavior, dependent on excitation density, is well explained by a diffusion model considering the full carrier recombination dynamics obtained from time-resolved measurements. These findings are important for understanding the high efficiency of III-nitride emitters and for the design of efficient small-scale devices.

PHYSICAL REVIEW APPLIED (2021)

Article Engineering, Electrical & Electronic

Prospects and challenges of mini-LED, OLED, and micro-LED displays

En-Lin Hsiang et al.

Summary: This review article provides a comprehensive overview of the LCD, OLED, and LED display technologies through nine display performance indicators, comparing their advantages and disadvantages and discussing their future perspectives.

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY (2021)

Article Optics

AlGaN-based deep ultraviolet micro-LED emitting at 275 nm

Huabin Yu et al.

Summary: The investigation revealed that micro-scale AlGaN deep ultraviolet (DUV) light-emitting diodes (LEDs) with smaller mesa areas deliver considerably higher light output power density and can sustain a higher current density. Reducing the diameter of LED chips can increase the peak external quantum efficiency (EQE) and peak EQE current density, but it may also lead to longer wavelength emission and larger full-width at half-maximum (FWHM) in LEDs with smaller chip sizes due to self-heating effect at high current injection.

OPTICS LETTERS (2021)

Article Optics

Enhanced light extraction of the deep-ultraviolet micro-LED via rational design of chip sidewall

Meng Tian et al.

Summary: Micro-LEDs with smaller inclined chip sidewall angles exhibit improved external quantum efficiency due to stronger reflection of the inclined sidewall, leading to enhanced light extraction efficiency. The EQE improvement by adopting an inclined sidewall is more significant as the diameter of the LED chip reduces. Numerical optical modeling further verifies the impact of sidewall angles on the light extraction efficiency of micro-LEDs.

OPTICS LETTERS (2021)

Article Physics, Applied

Development of microLED

J. Y. Lin et al.

APPLIED PHYSICS LETTERS (2020)

Article Optics

Angular color shift of micro-LED displays

Fangwang Gou et al.

OPTICS EXPRESS (2019)

Article Optics

III-Nitride Micro-LEDs for Efficient Emissive Displays

Jonathan Wierer et al.

LASER & PHOTONICS REVIEWS (2019)

Review Materials Science, Multidisciplinary

Review-Progress in High Performance III-Nitride Micro-Light-Emitting Diodes

Matthew S. Wong et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)

Article Materials Science, Multidisciplinary

Review-The Physics of Recombinations in III-Nitride Emitters

Aurelien David et al.

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY (2019)

Article Materials Science, Multidisciplinary

From Large-Size to Micro-LEDs: Scaling Trends Revealed by Modeling

Sergey S. Konoplev et al.

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2018)

Article Multidisciplinary Sciences

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Junlei He et al.

SCIENTIFIC REPORTS (2018)

Article Physics, Applied

Effects of Wavelength and Defect Density on the Efficiency of (In, Ga) N-Based Light-Emitting Diodes

Markus Pristovsek et al.

PHYSICAL REVIEW APPLIED (2017)

Article Physics, Applied

Shockley-Read-Hall and Auger non-radiative recombination in GaN based LEDs: A size effect study

Francois Olivier et al.

APPLIED PHYSICS LETTERS (2017)

Article Materials Science, Multidisciplinary

Impact of surface recombination on efficiency of III-nitride light-emitting diodes

Kirill A. Bulashevich et al.

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2016)

Article Materials Science, Multidisciplinary

GaN m-plane: Atomic structure, surface bands, and optical response

M. Landmann et al.

PHYSICAL REVIEW B (2015)

Article Materials Science, Multidisciplinary

High-performance light-emitting diodes using hierarchical m-plane GaN nano-prism light extractors

Siva Pratap Reddy M et al.

JOURNAL OF MATERIALS CHEMISTRY C (2015)

Article Engineering, Electrical & Electronic

ABC-model for interpretation of internal quantum efficiency and its droop in III-nitride LEDs: a review

Sergey Karpov

OPTICAL AND QUANTUM ELECTRONICS (2015)

Review Materials Science, Multidisciplinary

Surface-induced effects in GaN nanowires

Raffaella Calarco et al.

JOURNAL OF MATERIALS RESEARCH (2011)

Article Physics, Applied

Surface band bending of a-plane GaN studied by scanning Kelvin probe microscopy

S Chevtchenko et al.

APPLIED PHYSICS LETTERS (2006)

Article Physics, Applied

Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry

X Guo et al.

APPLIED PHYSICS LETTERS (2001)