Room-temperature polariton lasing in GaN microrods with large Rabi splitting

Room-temperature polariton lasing is achieved in GaN microrods grown by metalorganic vapor phase epitaxy. We demonstrate a large Rabi splitting (Omega=2(g0)) up to 162 meV, exceeding the results from both the state-of-the-art nitride-based planar microcavities and previously reported GaN microrods. An ultra-low threshold of 1.8 kW/cm(2) is observed by power-dependent photoluminescence spectra, with the linewidth down to 1.31 meV and the blue shift up to 17.8 meV. This large Rabi splitting distinguishes our coherent light emission from a conventional photon lasing, which strongly supports the preparation of coherent light sources in integrated optical circuits and the study of exciting phenomena in macroscopic quantum states. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Automated summary

Room-temperature polariton lasing is achieved in GaN microrods grown by metalorganic vapor phase epitaxy. A large Rabi splitting is demonstrated, distinguishing the coherent light emission from conventional photon lasing. This has potential applications in integrated optical circuits and the study of exciting phenomena in macroscopic quantum states.