Ultra-bright green InGaN micro-LEDs with brightness over 10M nits

An investigation of electrical and optical properties of InGaN micro-scale light-emitting diodes (micro-LEDs) emitting at similar to 530 nm is carried out, with sizes of 80, 150, and 200 mu m. The ITO as a current spreading layer (CSL) provides excellent device performance. Over 10% external quantum efficiency (EQE) and wall-plug efficiency (WPE), and ultra-high brightness (> 10M nits) green micro-LEDs are realized. In addition, it is observed that better current spreading in smaller devices results in higher EQE and brightness. Superior green micro-LEDs can provide an essential guarantee for a variety of applications. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement

Automated summary

An investigation into the electrical and optical properties of InGaN micro-scale LEDs emitting at around 530 nm was conducted. The study found that micro-LEDs with sizes of 80, 150, and 200 μm demonstrated excellent device performance, achieving over 10% external quantum efficiency and wall-plug efficiency, as well as ultra-high brightness. Additionally, it was observed that smaller devices with better current spreading exhibited higher efficiency and brightness. Superior green micro-LEDs can serve as a crucial guarantee for various applications.