期刊
OPTICS EXPRESS
卷 30, 期 10, 页码 16827-16836出版社
Optica Publishing Group
DOI: 10.1364/OE.457740
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资金
- National Natural Science Foundation of China [11904302]
- Major Science and Technology Project of Xiamen, China [3502Z20191015]
- Technology Plan Project in Fujian Province of China [2021H0011]
- Hong Kong University of Science and Technology -Foshan Joint Research Program [FSUST19-FYTRI11]
This study utilized thin p-GaN, ITO, and RPL to improve the performance of DUV-LEDs, resulting in increased WPE and LEE. DUV-LEDs with RPL exhibited lower junction temperature compared to Ref-LED under high injection currents.
This study utilized thin p-GaN, indium tin oxide (ITO), and a reflective passivation layer (RPL) to improve the performance of deep ultra-violet light-emitting diodes (DUV-LEDs). RPL reflectors, which comprise HfO2/SiO2 stacks of different thickness to maintain high reflectance, were deposited on the DUV-LEDs with 40 nm-thick p-GaN and 12 nm-thick ITO thin films. Although the thin p-GaN and ITO films affect the operation voltage of DUV-LEDs, the highly reflective RPL structure improved the WPE and light extraction efficiency (LEE) of the DUV-LEDs, yielding the best WPE and LEE of 2.59% and 7.57%, respectively. The junction temperature of DUV-LEDs with thick p-GaN increased linearly with the injection current, while that of DUV-LEDs with thin p-GaN, thin ITO, and RPL was lower than that of the Ref-LED under high injection currents (> 500 mA). This influenced the temperature sensitive coefficients (dV/dT, dLOP/dT, and dWLP/dT). The thermal behavior of DUV-LEDs with p-GaN and ITO layers of different thicknesses with/without the RPL was discussed in detail. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
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