4.7 Article

Magneto-optical spin Hall effect of light in topological insulators

期刊

OPTICS AND LASER TECHNOLOGY
卷 155, 期 -, 页码 -

出版社

ELSEVIER SCI LTD
DOI: 10.1016/j.optlastec.2022.108115

关键词

Spin Hall effect of light; Topological insulators; Weak measurement

资金

  1. National Natural Science Foundation of China [11374108, 11674107, 11775083, 61875057]
  2. Science and Technology Program of Guangzhou [2019050001]
  3. Natural Science Foundation of Guangdong Province [2018A030313480]

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The study investigates the tunable spin Hall effect of light on the surface of topological insulators under the influence of an external magnetic field, revealing that the shift of the effect is determined by the dissipative and reactive components of the insulators' optical conductivity. The shifts are insensitive to the magnetic field and Fermi energy at high frequencies but sensitive to them at low frequencies, with potential applications in determining these properties using the SHEL shifts.
We examine a tunable spin Hall effect of light (SHEL) on the surface of topological insulators (TIs) under the influence of an external magnetic field, to the best of our knowledge, which can be regarded as the magnetooptical SHEL. It is revealed that the position of the Brewster angle and the value of the SHEL shifts are decided by the dissipative and reactive components of TIs optical conductivity, respectively. Specifically, the SHEL shifts are insensitive to the external magnetic field and the Fermi energy in the case of high frequency while it is sensitive to them in the case of low frequency. The potential applications of determination the external magnetic field and the Fermi energy of TIs by probing the SHEL shifts is proposed. Moreover, we can select high frequencies so that the measured SHEL shifts are not affected by the external magnetic field. These results can be extensively extended to other TIs. By incorporating the weak measurement techniques, the magneto-optical SHEL may provide application references in the fabrications of TIs parameter sensors or other topological photoelectric devices.

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