期刊
出版社
ELSEVIER
DOI: 10.1016/j.nima.2022.166533
关键词
Silicon photomultiplier; Radiation damage; Single cell SiPM
类别
资金
- Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) under Germany's Excellence Strategy, Quantum Universe [EXC 2121, 390833306]
- RFBR, Russia
- TUBITAK, Turkey [20-52-46005]
A dedicated single-cell SiPM structure was designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to Phi = 5e13 cm(-2). The results showed a reduction of 19% in gain and an increase in turn-off voltage to 0.5 V within the studied fluence range.
A dedicated single-cell SiPM structure is designed and measured to investigate the radiation damage effects on the gain and turn-off voltage of SiPMs exposed to a reactor neutron fluence up to Phi = 5e13 cm(-2). The cell has a pitch of 15 mu m. The fluence dependence of gain and turn-off voltage are reported. A reduction of the gain by 19% and an increase of v(off)by asymptotic to 0.5 V is observed after Phi = 5e13 cm(-2).
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