Gate-tuneable and chirality-dependent charge-to-spin conversion in tellurium nanowires

Chiral materials are an ideal playground for exploring the relation between symmetry, relativistic effects and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as tellurium have excellent electrical conductivity, but their potential for enabling the electrical control of spin polarization in devices remains unclear. Here, we demonstrate the all-electrical generation, manipulation and detection of spin polarization in chiral single-crystalline tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices. All-electrical generation, manipulation and detection of spin polarization in chiral nanowires is demonstrated.

Automated summary

This study explores the relationship between symmetry, relativistic effects, and electronic transport in chiral materials, and demonstrates the all-electrical generation, manipulation, and detection of spin polarization in chiral single-crystalline tellurium nanowires. The orientation of the electrically generated spin polarization is determined by the nanowire handedness and follows the current direction, while its magnitude can be manipulated by an electrostatic gate.