Co-deposition of MoS2 films by reactive sputtering and formation of tree-like structures

Transition metal dichalcogenides are versatile layered materials with potential applications ranging from optoelectronic devices to water splitting. Top-down fabrication methods such as exfoliation are not practical for a large-scale production of high-quality devices: a bottom-up approach such as sputtering, a low-temperature deposition method, is more suitable. However, due to its anisotropic nature, the growth mechanism of molybdenum disulfide (MoS2) via sputtering is complex and remains to be investigated in detail. In this paper, we study the growth of MoS2 films co-deposited by using a sulfur (S) hot-lip cell and a molybdenum (Mo) sputtering target via reactive sputtering. The impact of S partial pressure on the structure and morphology of MoS2 films was systematically characterized, and it was observed that the growth is dominated by vertically-oriented sheets with horizontal branches, resulting in a tree-like structure. The growth front of the structures is ascribed to the anisotropic incorporation of adatoms with regards to the orientation of MoS2.

Automated summary

In this paper, the growth mechanism of MoS2 films co-deposited by using a sulfur hot-lip cell and a molybdenum sputtering target via reactive sputtering was investigated. It was found that the growth is dominated by vertically-oriented sheets with horizontal branches, resulting in a tree-like structure. The anisotropic incorporation of adatoms with regards to the orientation of MoS2 is responsible for the growth front of the structures.