期刊
NANO LETTERS
卷 22, 期 10, 页码 3914-3921出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.2c00107
关键词
Flexoelectricity; Triboelectricity; Band structures; Schottky diodes; Contact mechanics
类别
资金
- National Science Foundation (NSF) [DMR-1507101]
- U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-FG02-01ER4594]
Triboelectric charge transfer is a complex and important phenomenon whose fundamental mechanism is still not fully understood. Recent research has proposed a model suggesting that flexoelectric band bending due to local asperity contacts is the main driving force for triboelectric charge transfer in non-metals. Experimental analysis of a doped semiconductor sample using a conductive atomic force microscope probe confirms the theoretical model, providing strong evidence for the significant role of flexoelectric band bending in triboelectric contacts.
Triboelectricity was recognized millennia ago, but the fundamental mechanism of charge transfer is still not understood. We have recently proposed a model where flexoelectric band bending due to local asperity contacts drives triboelectric charge transfer in non-metals. While this ab initio model is consistent with a wide range of observed phenomena, to date there have been no quantitative analyses of the proposed band bending. In this work we use a Pt0.8Ir0.2 conductive atomic force microscope probe to simultaneously deform a Nb-doped SrTiO3 sample and collect current-bias data. The current that one expects based upon an analysis including the relevant flexoelectric band bending for a deformed semiconductor quantitively agrees with the experiments. The analysis indicates a general ratcheting mechanism for triboelectric transfer and strong experimental evidence that flexoelectric band bending is of fundamental importance for triboelectric contacts.
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