Stacking-Dependent Electrical Transport in a Colloidal CdSe Nanoplatelet Thin-Film Transistor

Here, we report an exceptional feature of the onedimensional threadlike assemblies of a four-monolayer colloidal CdSe nanoplatelet (NPL)-based thin-film transistor. A series of different lengths of threads (200-1200 nm) was used as an active n channel in thin-film transistors (TFTs) to understand the change in mobility with the length of the threads. The film with the longest threads shows the highest conductivity of similar to 12 S/cm and electron mobility of similar to 14.3 cm(2) V-1 s(-1) for an applied gate voltage of 2 V. The mobility trends with the length seem to be driven mostly by the lower defects in threads, where the loss of electron hopping is less. Furthermore, our results show the mobility trends in stacking-dependent CdSe NPL threads and provide a new insight into fabricating high-mobility TFTs with the use of colloidal CdSe NPLs.

Automated summary

An exceptional feature of one-dimensional threadlike assemblies of a four-monolayer colloidal CdSe nanoplatelet-based thin-film transistor is reported. The study shows that the length of the threads affects the mobility, with the film containing the longest threads exhibiting the highest conductivity and electron mobility. The mobility trends are driven by the lower defects in the longer threads, resulting in less loss of electron hopping.