期刊
NANO LETTERS
卷 22, 期 6, 页码 2328-2333出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.1c04737
关键词
heterostructures; half-floating gate; multifunction; nonvolatile memory; diode
类别
资金
- Natural Science Foundation of Jiangsu Province of China [BK20190071]
- Scientific Research Project and Innovation Team of Hubei University of Science and Technology [HKCXTD-001]
- Research Foundation of Educational Commission of Hubei Province of China [B2020153]
In this study, a multifunctional electronic device based on two-dimensional heterostructure was successfully designed and fabricated, which integrates logic operations, data storage, and rectification functions, providing inspiration for the design of next-generation computation beyond the von Neumann architecture.
Multifunctional electronic devices that combine logic operation and data storage functions are of great importance in developing next-generation computation. The recent development of van der Waals (vdW) heterostructures based on various two-dimensional (2D) materials have brought exceptional opportunities in designing novel electronic devices. Although various 2D-heterostructure-based electronic devices have been reported, multifunctional devices that can combine logic operations and data storage functions are still quite rare. In this work, we design and fabricate a half-floating-gate field-effect transistor based on MoS2-BN-graphene vdW heterostuctures, which can be used for logic operations as a MOSFET, nonvolatile memory as a floating-gate MOSFET (FG-MOSFET), and rectification as a diode. These results could lay the foundation for various applications based on 2D vdW heterostuctures and inspire the design of next-generation computation beyond the von Neumann architecture.
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