Nanometer-Scale Lateral p-n Junctions in Graphene/α-RuCl3 Heterostructures

The ability to create nanometer-scale lateral p-n junctions is essential for the next generation of two-dimensional (2D) devices. Using the charge-transfer heterostructure graphene/alpha-RuCl3, we realize nanoscale lateral p-n junctions in the vicinity of graphene nanobubbles. Our multipronged experimental approach incorporates scanning tunneling microscopy (STM) and spectroscopy (STS) and scattering-type scanning near-field optical microscopy (s-SNOM) to simultaneously probe the electronic and optical responses of nanobubble p-n junctions. Our STM/STS results reveal that p-n junctions with a band offset of similar to 0.6 eV can be achieved with widths of similar to 3 nm, giving rise to electric fields of order 10(8) V/m. Concurrent s-SNOM measurements validate a point-scatterer formalism for modeling the interaction of surface plasmon polaritons (SPPs) with nanobubbles. Ab initio density functional theory (DFT) calculations corroborate our experimental data and reveal the dependence of charge transfer on layer separation. Our study provides experimental and conceptual foundations for generating p-n nanojunctions in 2D materials.

Automated summary

The researchers successfully created nanometer-scale lateral p-n junctions using graphene/alpha-RuCl3 heterostructure near graphene nanobubbles. Through STM/STS and s-SNOM techniques, they investigated the electronic and optical responses of nanobubble p-n junctions, achieving p-n junctions with a width of around 3 nm and an electric field of approximately 10(8) V/m. The study also utilized ab initio density functional theory calculations to corroborate experimental data and provide insights into charge transfer mechanisms in 2D materials.