Crystallographic Effects of GaN Nanostructures in Photoelectrochemical Reaction

Tuning the surface structure of the photoelectrode provides one of the most effective ways to address the critical challenges in artificial photosynthesis, such as efficiency, stability, and product selectivity, for which gallium nitride (GaN) nanowires have shown great promise. In the GaN wurtzite crystal structure, polar, semipolar, and nonpolar planes coexist and exhibit very different structural, electronic, and chemical properties. Here, through a comprehensive study of the photoelectrochemical performance of GaN photocathodes in the form of films and nanowires with controlled surface polarities we show that significant photoelectrochemical activity can be observed when the nonpolar surfaces are exposed in the electrolyte, whereas little or no activity is measured from the GaN polar c-plane surfaces. The atomic origin of this fundamental difference is further revealed through density functional theory calculations. This study provides guideline on crystal facet engineering of metal-nitride photo(electro)catalysts for a broad range of artificial photosynthesis chemical reactions.

Automated summary

Tuning the surface structure of gallium nitride (GaN) photoelectrodes is an effective approach to address challenges in artificial photosynthesis. Nonpolar surfaces of GaN exhibit significant photoelectrochemical activity, while polar c-plane surfaces show little to no activity. Density functional theory calculations provide insight into the atomic origin of this difference.