Variability estimation in resistive switching devices, a numerical and kinetic Monte Carlo perspective

We have analyzed variability in resistive memories (Resistive Random Access Memories, RRAMs) making use of advanced numerical techniques to process experimental measurements and simulations based on the kinetic Monte Carlo technique. The devices employed in the study were fabricated using the TiN/Ti/HfO2/W stack. The switching parameters were obtained making use of new developed extraction methods. The appropriateness of the advanced parameter extraction methodologies has been checked by comparison to kinetic Monte Carlo simulations; in particular, the reset and set events have been studied and detected. The data obtained were employed to shed light on the resistive switching operation and the cycle-to-cycle variability. It has been shown that variability depends on the numerical technique employed to obtain the set and reset voltages, therefore, this issue must be taken into consideration in RS characterization and modeling studies. The proposed techniques are complementary and depending on the technology and the curves shape the features of a particular method could make it to be the most appropriate.

Automated summary

This study analyzed the variability of resistive memories using advanced numerical techniques. New extraction methods were developed to obtain switching parameters and their appropriateness were checked against kinetic Monte Carlo simulations. The results showed that the variability of resistive memories depends on the numerical technique used, highlighting the importance of considering this issue in RS characterization and modeling studies.