4.6 Article

Bias-stress stability of top-gate coplanar a-ITGZO TFTs with HfO2 and HfAlO gate dielectrics

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Physics, Applied

Impact of vacancies and impurities on ferroelectricity in PVD- and ALD-grown HfO2 films

Lutz Baumgarten et al.

Summary: This study investigates the emerging chemical states of TiN/HfO2/TiN capacitors, identifying different mechanisms of oxygen vacancy formation and electronic interactions between oxygen vacancies and nitrogen impurities in the HfO2 layers. Spectral features of HfO2 and TiN core levels are consistently observed by HAXPES, and the results are linked to electric field cycling experiments on the capacitors to discuss possible formation mechanisms and stabilization of the ferroelectric HfO2 phase under specific PVD or ALD conditions.

APPLIED PHYSICS LETTERS (2021)

Article Engineering, Electrical & Electronic

Analytical Surface Potential-Based Compact Model for Independent Dual Gate a-IGZO TFT

Jingrui Guo et al.

Summary: A surface potential-based compact model for IDG a-IGZO TFTs is proposed in this study, considering percolation conduction, trap-limited conduction, and variable range hopping transport theories. A single formulation of front and back surface potentials is developed, which is valid and accurate in all operation regimes. The compact model is verified through numerical simulation and experiment, showing excellent agreement and applicability for circuit design.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2021)

Article Engineering, Electrical & Electronic

Electrical characteristics of amorphous indium-tin-gallium-zinc-oxide TFTs under positive gate bias stress

D. Kim et al.

ELECTRONICS LETTERS (2020)

Article Engineering, Electrical & Electronic

Achieving High Mobility and Excellent Stability in Amorphous In-Ga-Zn-Sn-O Thin-Film Transistors

Il Man Choi et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

Article Engineering, Electrical & Electronic

Study of Positive-Gate-Bias-Induced Hump Phenomenon in Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Xuewen Shi et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2020)

Article Engineering, Electrical & Electronic

Electrical characteristics of bendable a-ITGZO TFTs on colorless polyimide substrates

Hosang Lee et al.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2020)

Article Nanoscience & Nanotechnology

Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

Jiazhen Sheng et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

Review Chemistry, Analytical

A Review for Compact Model of Thin-Film Transistors (TFTs)

Nianduan Lu et al.

MICROMACHINES (2018)

Article Engineering, Electrical & Electronic

Mechanism and Origin of Hysteresis in Oxide Thin-Film Transistor and Its Application on 3-D Nonvolatile Memory

Zhi Ye et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2017)

Article Engineering, Electrical & Electronic

Characterization of MIS structures and thin film transistors using RF-sputtered HfO2/HIZO layers

I. Hernandez et al.

MICROELECTRONICS RELIABILITY (2017)

Article Engineering, Electrical & Electronic

Analysis on Trapping Kinetics of Stress-Induced Trapped Holes in Gate Dielectric of Amorphous HfInZnO TFT

Dae Woong Kwon et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)

Article Engineering, Electrical & Electronic

High-Voltage Amorphous InGaZnO TFT With Al2O3 High-k Dielectric for Low-Temperature Monolithic 3-D Integration

Ming-Jiue Yu et al.

IEEE TRANSACTIONS ON ELECTRON DEVICES (2016)

Article Physics, Condensed Matter

Comparison of HfAlO, HfO2/Al2O3, and HfO2 on n-type GaAs using atomic layer deposition

Bin Lu et al.

SUPERLATTICES AND MICROSTRUCTURES (2016)

Article Chemistry, Physical

Controlled direct growth of Al2O3-doped HfO2 films on graphene by H2O-based atomic layer deposition

Li Zheng et al.

PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2015)

Article Engineering, Electrical & Electronic

Oxide structure-dependent interfacial layer defects of HfAlO/SiO2/Si stack analyzed by conductance method

Yi Ming Ding et al.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2015)

Article Nanoscience & Nanotechnology

Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nano laminated (HfAlOx) Dielectrics on In0.53Ga0.47As

Chandreswar Mahata et al.

ACS APPLIED MATERIALS & INTERFACES (2013)

Article Engineering, Electrical & Electronic

HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

S. Mallik et al.

MICROELECTRONIC ENGINEERING (2010)

Article Physics, Applied

Interfacial characteristics of N-incorporated HfAlO high-k thin films

MH Cho et al.

APPLIED PHYSICS LETTERS (2004)

Article Materials Science, Ceramics

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

LG Gosset et al.

JOURNAL OF NON-CRYSTALLINE SOLIDS (2002)