Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate

In this paper, a two-layer model was used to investigate the electrical properties of InGaN epilayer grown by MOCVD on a semiconducting GaN template substrate. The elaboration process was optimized to obtain high-quality InGaN epilayers with respect to the indium composition. The details of structural and optical properties as well as the surface morphology evolution were studied using X-ray diffraction, photoluminescence spectroscopy, and atomic force microscopy, respectively. The electrical transport properties were measured using the van der Pauw/Hall effect method combined with a two layer model for the first time for InGaN. The obtained experimental results combined with the developed model allowed to precisely extract the electrical properties of the InGaN epilayers and correlate them to the structural properties. The developed model procedure and code are made available and can be easily adapted to other III-N and III-V compound semiconductors grown on a semiconducting substrate.

Automated summary

In this study, a two-layer model was used to investigate the electrical properties of InGaN epilayers grown on a GaN substrate. The study optimized the growth process to obtain high-quality InGaN epilayers and analyzed their structural, optical, and surface morphology properties. The electrical transport properties of InGaN were measured using the van der Pauw/Hall effect method combined with the two-layer model for the first time.