Photoresponse properties of thin films of vertically grown WS2 nanoflakes

The photoresponse properties of Tungsten disulphide (WS2)/Silicon (Si) thin films, synthesised by the e-beam evaporation technique, have been reported. The synthesised films show preferential orientation along (001) direction of hexagonal WS2. The synthesised films were composed of vertically grown nanoflakes that were a few-layered thick. The films were highly absorbent in the visible range and exhibited A, B, and C excitonic transitions in the absorbance spectra. A type-II heterojunction between WS2/Si was obtained. Photodetection studies gave a high responsivity of 1.17 AW(-1) at an illumination of 1.6 mWcm(-2) of white light.

Automated summary

The photoresponse properties of Tungsten disulphide (WS2)/Silicon (Si) thin films, synthesised by the e-beam evaporation technique, exhibited high absorbance in the visible range and a type-II heterojunction. Photodetection studies showed a high responsivity of 1.17 AW(-1) at an illumination of 1.6 mWcm(-2) of white light.