4.6 Article

Mechanism of hydroxyl radicals formation on the reduced rutile

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MATERIALS RESEARCH BULLETIN
卷 147, 期 -, 页码 -

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PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.materresbull.2021.111643

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semiconductors; optical properties; electron spin resonance; Defects

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TiO2 with Ti3+ defects was prepared by heating of titania raw material under flow of an ammonia gas. Different types of surface defects were formed in titania during the heat treatment process and were analyzed by EPR technique. Enhanced formation of hydroxyl radicals was observed under both UV and visible light irradiations on TiO2 sample prepared at 700℃, which contained inner Ti3+ centers and oxygen vacancies in rutile lattice sites. The presence of rutile defects likely increased the formation of O-2(-•) radicals, leading to the generation of H2O2 and further hydroxyl radicals. The formation of inner Ti3+ centers in rutile created an intra band gap, enhancing its visible light activity.
Preparation of TiO2 with Ti3+ defects was performed by heating of titania raw material under flow of an ammonia gas at the temperatures of 300-700 ?. Different types of surface defects have been formed in titania upon heat treatment process and they were analysed by EPR technique. Enhanced formation of hydroxyl radicals was observed under both UV and visible light irradiations, on TiO2 sample prepared at 700 ?, which contained inner Ti3+ centers and oxygen vacancies in rutile lattice sites. The most probably the presence of rutile defects increased formation of O-2(-& BULL;) radicals, which then gave yield in H2O2 and further in hydroxyl radicals. The intra band gap was created in rutile due to the formation of inner Ti3+ centers, which enhanced its visible light activity.

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