Construction of nanostructured CH3NH3PbI3 layer for high-performance perovskite solar cells by Ar plasma etching

Organic-inorganic lead halide perovskite materials have attracted wide attention owing to their great opto-electronic properties and low-temperature solution processability. Mesostructured perovskite solar cells (PSCs) could help to further improve the photovoltaic property. However, the existing approaches by inserting a layer of metal-oxide are generally need special treatment and consume much energy. In this work, an Ar plasma etching method is employed to modify composition of the perovskite absorb material with its morphology remain un-changed, which can effectively avoid unfavorable defects and enhance the charge separation efficiency. Based on controllable pore structure and porosity, the idiosyncratic mesostructured perovskite solar cells yield an 18.7% improvement in power conversion efficiency as compared with the common planar-type counterparts. Therefore, this method offers a room temperature scheme for high-performance mesostructured perovskite solar cells, making the flexible PSC possible.

Automated summary

Organic-inorganic lead halide perovskite materials with great opto-electronic properties and low-temperature solution processability have attracted much attention. Mesostructured perovskite solar cells (PSCs) can enhance the photovoltaic property. In this study, an Ar plasma etching method is used to modify the composition of the perovskite absorb material without changing its morphology, effectively avoiding unfavorable defects and improving charge separation efficiency. With controllable pore structure and porosity, mesostructured perovskite solar cells show an 18.7% improvement in power conversion efficiency compared to common planar-type cells.