4.6 Article

Dislocation reaction-based formation mechanism of stacking fault tetrahedra in FCC high-entropy alloy

期刊

MATERIALS CHEMISTRY AND PHYSICS
卷 282, 期 -, 页码 -

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.matchemphys.2022.125997

关键词

Stacking fault tetrahedron; High-entropy alloy; Molecular dynamics; Dislocation reaction

资金

  1. National Natural Science Foundation of China [11932004, 11802045]
  2. Chongqing Natural Science Foundation [cstc2019jcyj-bshX0029]

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In this study, the formation mechanisms of stacking fault tetrahedron (SFT) in high-entropy alloys were investigated using molecular dynamics simulations. The migration and thickening of grain boundaries, as well as the nucleation and glide of dislocations from the grain boundaries, were found to be the main causes of deformation, leading to the formation of SFT. Two types of dislocation reaction-based mechanisms were observed, without the involvement of vacancy aggregation or Frank loops.
In conventional FCC metals and alloys, the formation mechanisms of stacking fault tetrahedron (SFT) based on the vacancy cluster and Frank loop have been widely accepted; however, the dislocation reaction-based for-mation mechanism of SFT without Frank loop and vacancy cluster remains controversial. In this work, we studied the formation of the SFTs in CoCrFeNiCu high-entropy alloy (HEA) bicrystals and their single-crystal counterparts subjected to shear deformation using molecular dynamics (MD) simulations. The migration and thickening of grain boundaries, and the nucleation and glide of dislocations from the grain boundaries are the predominant carriers of deformation, which are the prerequisite for the formation of SFT. We observed two types of dislocation reaction-based formation mechanisms, where there is no vacancy aggregation and Frank loop participation. The formation of SFT originates from the growth of the bottom face of the pyramid in the bicrystal HEA, while in the single-crystal HEA, SFT nucleates at its vertex, and extends towards its bottom.

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