Analysis of the Spontaneous Emission Limited Linewidth of an Integrated III-V/SiN Laser

This article describes a calculation of the spontaneous emission limited linewidth of a semiconductor laser consisting of hybrid or heterogeneously integrated, silicon and III-V intracavity components. Central to the approach are a) description of the multi-element laser cavity in terms of composite laser/free-space eigenmodes, b) use of multimode laser theory to treat mode competition and multiwave mixing, and c) incorporation of quantum-optical contributions to account for spontaneous emission effects. Application of the model is illustrated for the case of linewidth narrowing in an InAs quantum-dot laser coupled to a high-Q SiN cavity.

Automated summary

This article presents a method to calculate the spontaneous emission limited linewidth of a semiconductor laser. The method involves describing the laser cavity using composite laser/free-space eigenmodes, applying multimode laser theory to handle mode competition and multiwave mixing, and incorporating quantum-optical contributions to account for spontaneous emission effects. The model is applied to the case of linewidth narrowing in an InAs quantum-dot laser coupled to a high-Q SiN cavity.