相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。Atomic Layer Processes for Material Growth and Etching-A Review
Faiz Rahman et al.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING (2021)
Rotational Dynamics of Desorption: Methane and Ethane at Stepped and Kinked Platinum Surfaces
Sabine C. Matysik et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2021)
Reaction Mechanism and Selectivity Control of Si Compound ALE Based on Plasma Modification and F-Radical Exposure
R. H. J. Vervuurt et al.
LANGMUIR (2021)
Surface Chirality Influences Molecular Rotation upon Desorption
Sabine C. Matysik et al.
PHYSICAL REVIEW LETTERS (2021)
DFTB plus , a software package for efficient approximate density functional theory based atomistic simulations
B. Hourahine et al.
JOURNAL OF CHEMICAL PHYSICS (2020)
Statistical insights into the reaction of fluorine atoms with silicon
Rimantas Knizikevicius
SCIENTIFIC REPORTS (2020)
On the Formation of Black Silicon Features by Plasma-Less Etching of Silicon in Molecular Fluorine Gas
Bishal Kafle et al.
NANOMATERIALS (2020)
First principles calculation of interfacial stability, energy, and elemental diffusional stability of Fe (111)/Al2O3 (0001) interface
Yu Wang et al.
AIP ADVANCES (2019)
Review Article: Reactions of fluorine atoms with silicon, revisited, again
Vincent M. Donnelly
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2017)
Selective Etching of Silicon in Preference to Germanium and Si0.5Ge0.5
Christopher F. Ahles et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Adsorption-Induced Surface Stresses of the Water/Quartz Interface: Ab Initio Molecular Dynamics Study
Gennady Y. Gor et al.
LANGMUIR (2016)
Dynamics of surface-migration: Electron-induced reaction of 1,2-dihaloethanes on Si(100)
Kai Huang et al.
SURFACE SCIENCE (2016)
The ReaxFF reactive force-field: development, applications and future directions
Thomas P. Senftle et al.
NPJ COMPUTATIONAL MATERIALS (2016)
Repulsion-Induced Surface-Migration by Ballistics and Bounce
Si Yue Guo et al.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS (2015)
Overview of atomic layer etching in the semiconductor industry
Keren J. Kanarik et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2015)
Molecular Dynamics of the Electron-Induced Reaction of Diiodomethane on Cu(110)
Avisek Chatterjee et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2014)
Mode-specificity and transition state-specific energy redistribution in the chemisorption of CH4 on Ni{100}
Marco Sacchi et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2012)
Bond-selective energy redistribution in the chemisorption of CH3D and CD3H on Pt{110)-(1 x 2): A first-principles molecular dynamics study
M. Sacchi et al.
COMPUTATIONAL AND THEORETICAL CHEMISTRY (2012)
Mode-Specific Chemisorption of CH4 on Pt{110}-(1 x 2) Explored by First-Principles Molecular Dynamics
M. Sacchi et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2011)
Self-Assembly of (S)-Glutamic Acid on Ag(100): A Combined LT-STM and Ab Initio Investigation
M. Smerieri et al.
LANGMUIR (2010)
Silicon oxidation by ozone
Christian K. Fink et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2009)
First-principles molecular dynamics of the initial oxidation of Si{001} by ozone
Christian K. Fink et al.
PHYSICAL REVIEW B (2008)
Radical-mediated adsorption: Ozone oxidation of passivated silicon
Christian K. Fink et al.
SURFACE SCIENCE (2008)
Experimental vibrational zero-point energies: Diatomic molecules
Karl K. Irikura
JOURNAL OF PHYSICAL AND CHEMICAL REFERENCE DATA (2007)
Isotropic etching of silicon in fluorine gas for MEMS micromachining
Leonel R. Arana et al.
JOURNAL OF MICROMECHANICS AND MICROENGINEERING (2007)
First principles methods using CASTEP
SJ Clark et al.
ZEITSCHRIFT FUR KRISTALLOGRAPHIE (2005)
The influence of diffusion of fluorine compounds for silicon lateral etching
P Verdonck et al.
THIN SOLID FILMS (2004)
Fundamental beam studies of deuterium and fluorine radical reaction kinetics on surfaces
F Greer et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2003)
Reactivity of fluorinated Si(100) with F2
DP Pullman et al.
JOURNAL OF PHYSICAL CHEMISTRY B (2001)
Fluorine atom abstraction by Si(100) II. Model
MR Tate et al.
JOURNAL OF CHEMICAL PHYSICS (2000)