4.8 Article

Caging-Pnictogen-Induced Superconductivity in Skutterudites IrX3(X = As, P)

期刊

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 144, 期 14, 页码 6208-6214

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jacs.1c09244

关键词

-

资金

  1. National Key R&D Program of China [2018YFA0704300]
  2. National Natural Science Foundation of China [U1932217, 11974246, 12004252]
  3. Natural Science Foundation of Shanghai [19ZR1477300]
  4. Science and Technology Commission of Shanghai Municipality [19JC1413900]
  5. Shanghai Science and Technology Plan [21DZ2260400]
  6. MEXT Elements Strategy Initiative to form Core Research Center [JPMXP0112101001]
  7. C.EM [02161943]
  8. Analytical Instrumentation Center [SPST-AIC10112914]
  9. SPST, ShanghaiTech University

向作者/读者索取更多资源

A new kind of compound, X delta Ir4X12-delta, the first hole-doped skutterudites superconductor, is reported. Atomic-resolution images of caging As atoms are provided using scanning transmission electron microscopy (STEM). By inserting As atoms into the caged structure under high pressure, superconductivity emerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3 (IrP3). The electronic states in X delta Ir4X12-delta are dominated by the caged X atom, suggesting a distinct pairing mechanism. Density functional theory (DFT) calculations reveal a close relationship between the pressure-dependent local-phonon mode and the enhancement of Tc. The discovery of X delta Ir4X12-delta provides a new arena to investigate hole-doped skutterudites, and the proposed method represents a new strategy of carrier doping in caged structures without introducing extra elements.
Here, we report on a new kind of compound, X delta Ir4X12-delta(X = P, As), thefirst hole-doped skutterudites superconductor. We provide atomic-resolution images ofthe caging As atoms using scanning transmission electron microscopy (STEM). Byinserting As atoms into the caged structure under a high pressure, superconductivityemerges with a maximum transition temperature (Tc) of 4.4 K (4.8 K) in IrAs3(IrP3).In contrast to all of the electron-doped skutterudites, the electronic states around theFermi level in X delta Ir4X12-delta are dominated by the caged X atom, which can be described bya simple body-centered tight-binding model, implying a distinct pairing mechanism. Ourdensity functional theory (DFT) calculations reveal an intimate relationship betweenthe pressure-dependent local-phonon mode and the enhancement ofTc. The discoveryof X delta Ir4X12-delta provides an arena to investigate the uncharted territory of hole-doped skutterudites, and the method proposed hererepresents a new strategy of carrier doping in caged structures, without introducing extra elements

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据