期刊
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 144, 期 16, 页码 7402-7413出版社
AMER CHEMICAL SOC
DOI: 10.1021/jacs.2c01706
关键词
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资金
- Department of Energy, Office of Science Basic Energy Sciences [DE-SC0014520]
- DOE Office of Science
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China [2021ZZ127]
- Minjiang Scholar Professorship [GXRC-21004]
- National Natural Science Foundation of China [52102218, 61728401]
- National Key Research and Development Program/Key Scientific Issues of Transformative Technology [2020YFA0710303]
- Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF) [ECCS-1542205]
- MRSEC program [NSF DMR-1720139]
- Keck Foundation, State of Illinois, through IIN
- Office of Science of the U.S. Department of Energy [DE-AC02-06CH11357, DE-AC02-05CH11231]
- Singapore MOE AcRF Tier 2 [2018-T2-1-010]
- Singapore A*STAR project [A19D9a0096]
This study optimized the electrical and thermal transport properties of PbS-based compounds by alloying with GeS, leading to improved performance in converting waste heat into electricity. The addition of GeS triggered a complex cascade of beneficial events, resulting in increased power factor and electron mobility, as well as decreased lattice thermal conductivity. The highest performance was achieved with 14% GeS-alloyed samples, demonstrating a potential for significant global energy savings.
Converting waste heat into useful electricity using solid-state thermoelectrics has a potential for enormous global energy savings. Lead chalcogenides are among the most prominent thermoelectric materials, whose performance decreases with an increase in chalcogen amounts (e.g., PbTe > PbSe > PbS). Herein, we demonstrate the simultaneous optimization of the electrical and thermal transport properties of PbS-based compounds by alloying with GeS. The addition of GeS triggers a complex cascade of beneficial events as follows: Ge2+ substitution in Pb2+ and discordant off-center behavior; formation of Pb5Ge5S12 as stable second-phase inclusions through valence disproportionation of Ge2+ to Ge-0 and Ge4+. PbS and Pb5Ge5S12 exhibit good conduction band energy alignment that preserves the high electron mobility; the formation of Pb5Ge5S12 increases the electron carrier concentration by introducing S vacancies. Sb doping as the electron donor produces a large power factor and low lattice thermal conductivity (kappa(lat)) of similar to 0.61 W m(-1) K-1. The highest performance was obtained for the 14% GeS-alloyed samples, which exhibited an increased room-temperature electron mobility of similar to 121 cm(2) V-1 s(-1) for 3 x 10(19) cm(-3) carrier density and a ZT of 1.32 at 923 K. This is similar to 55% greater than the corresponding Sb-doped PbS sample and is one of the highest reported for the n-type PbS system. Moreover, the average ZT (ZT(avg)) of similar to 0.76 from 400 to 923 K is the highest for PbS-based systems.
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