4.8 Article

Valence Disproportionation of GeS in the PbS Matrix Forms Pb5Ge5S12 Inclusions with Conduction Band Alignment Leading to High n-Type Thermoelectric Performance

期刊

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
卷 144, 期 16, 页码 7402-7413

出版社

AMER CHEMICAL SOC
DOI: 10.1021/jacs.2c01706

关键词

-

资金

  1. Department of Energy, Office of Science Basic Energy Sciences [DE-SC0014520]
  2. DOE Office of Science
  3. Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China [2021ZZ127]
  4. Minjiang Scholar Professorship [GXRC-21004]
  5. National Natural Science Foundation of China [52102218, 61728401]
  6. National Key Research and Development Program/Key Scientific Issues of Transformative Technology [2020YFA0710303]
  7. Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF) [ECCS-1542205]
  8. MRSEC program [NSF DMR-1720139]
  9. Keck Foundation, State of Illinois, through IIN
  10. Office of Science of the U.S. Department of Energy [DE-AC02-06CH11357, DE-AC02-05CH11231]
  11. Singapore MOE AcRF Tier 2 [2018-T2-1-010]
  12. Singapore A*STAR project [A19D9a0096]

向作者/读者索取更多资源

This study optimized the electrical and thermal transport properties of PbS-based compounds by alloying with GeS, leading to improved performance in converting waste heat into electricity. The addition of GeS triggered a complex cascade of beneficial events, resulting in increased power factor and electron mobility, as well as decreased lattice thermal conductivity. The highest performance was achieved with 14% GeS-alloyed samples, demonstrating a potential for significant global energy savings.
Converting waste heat into useful electricity using solid-state thermoelectrics has a potential for enormous global energy savings. Lead chalcogenides are among the most prominent thermoelectric materials, whose performance decreases with an increase in chalcogen amounts (e.g., PbTe > PbSe > PbS). Herein, we demonstrate the simultaneous optimization of the electrical and thermal transport properties of PbS-based compounds by alloying with GeS. The addition of GeS triggers a complex cascade of beneficial events as follows: Ge2+ substitution in Pb2+ and discordant off-center behavior; formation of Pb5Ge5S12 as stable second-phase inclusions through valence disproportionation of Ge2+ to Ge-0 and Ge4+. PbS and Pb5Ge5S12 exhibit good conduction band energy alignment that preserves the high electron mobility; the formation of Pb5Ge5S12 increases the electron carrier concentration by introducing S vacancies. Sb doping as the electron donor produces a large power factor and low lattice thermal conductivity (kappa(lat)) of similar to 0.61 W m(-1) K-1. The highest performance was obtained for the 14% GeS-alloyed samples, which exhibited an increased room-temperature electron mobility of similar to 121 cm(2) V-1 s(-1) for 3 x 10(19) cm(-3) carrier density and a ZT of 1.32 at 923 K. This is similar to 55% greater than the corresponding Sb-doped PbS sample and is one of the highest reported for the n-type PbS system. Moreover, the average ZT (ZT(avg)) of similar to 0.76 from 400 to 923 K is the highest for PbS-based systems.

作者

我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。

评论

主要评分

4.8
评分不足

次要评分

新颖性
-
重要性
-
科学严谨性
-
评价这篇论文

推荐

暂无数据
暂无数据