Microstructure evolution in Si+ ion irradiated and annealed Ti3SiC2 MAX phase

Ti3SiC2 samples were irradiated by a 6-MeV Si+ ion to a fluence of 2 x$ \times $ 10(16) Si+ ions/cm(2) at 300 degrees C followed by annealing at 900 degrees C for 5 h. A transmission electron microscope was used to characterize microstructural evolution. The phase of Ti3SiC2 transformed from the hexagonal close-packed (HCP) to a face-centered cubic structure after irradiation. Hexagonal screw dislocation networks were identified at the deepest position of the irradiated area, which are the products of dislocations reactions. After annealing, the irradiated region has reverted to the original HCP structure. High-density cavities and stacking faults were formed along the basal planes. In addition, ripplocations have been observed in the irradiated region in the Ti3SiC2 sample after annealing. Our insights into the formation processes and corresponding mechanisms of these defect structures might be helpful in the material design of advanced irradiation tolerance materials.

Automated summary

During irradiation and annealing, the phase structure of Ti3SiC2 samples underwent transformation and various defect structures, such as dislocation networks, cavities, and stacking faults, were formed. After annealing, the irradiated region reverted to its original structure. Understanding the formation processes and mechanisms of these defects can be beneficial in the design of advanced materials.