β-Ga2O3 nanowires: controlled growth, characterization, and deep-ultraviolet photodetection application

We investigate the growth of ((2) over bar 01) beta-Ga2O3 nanowires with a GaN seed crystal in detail. Growth of ((2) over bar 01) beta-Ga2O3 nanowires starts with the formation of (001) Ga(II)-O chains of octahedral Ga2O6 structures, indicating the initial formation of ((2) over bar 01) and (001) atomic facets of beta-Ga2O3 nanowires. Subsequent growth of Ga2O3 leads to the formation of (100) Ga(I)-O chains and energetically stable (100) and (010) sidewalls and octahedral Ga2O6 structures in the beta-Ga2O3 nanowires. Energetically stable tetrahedral GaO4 structures are eventually formed in the beta-Ga2O3 nanowires. High-quality N-doped ((2) over bar 01) beta-Ga2O3 nanowires are synthesized and growth kinetics is clarified. The beta-Ga2O3 nanowires deep-ultraviolet photodetectors show superior performance with high photoresponsivity (3.5 x 10(3) A W-1) and detectivity (9.6 x 10(15) Jones) at -10 V bias.

Automated summary

We investigated the growth of (2 over bar 01) β-Ga2O3 nanowires with a GaN seed crystal in detail and clarified the growth kinetics. N-doped β-Ga2O3 nanowires showed superior performance with high photoresponsivity and detectivity.