期刊
JOURNAL OF PHYSICAL CHEMISTRY B
卷 126, 期 14, 页码 2729-2739出版社
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpcb.2c00144
关键词
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资金
- National Key R&D Program of China [2020YFA0714603, 2020YFA0714604]
- Tianjin University
This study investigates the photophysics of two MR-TADF emitters using quantum chemical calculation and ultrafast transient absorption spectroscopy. It reveals that TBN-TPA undergoes two-step relaxation in S-1 state, which is favored for narrowband emission.
Multiple-resonance thermally activated delayed fluorescence (MR-TADF) emitters are becoming increasingly attractive due to their applications in high-resolution organic light-emitting diode (OLED) display technology. Here, we present an investigation on the photophysics of two MR-TADF emitters (t-DABNA and TBN-TPA) by using quantum chamical calculation and ultrafast transient absorption (TA) spectroscopy. Compared with one-step structural planarization of t-DABNA, TBN-TPA undergoes two-step relaxation in S-1 state, i.e., fast twisting of the peripheral group and subsequent restrained planarization of the B-N framework. The efficient twisting motion of the peripheral group largely reduces the energy level of the TBN-TPA system and correspondingly increases the barrier for subsequent planarization, which is favored for the narrowband emission. Our work provides a detailed picture for the excited-state deactivation of peripheral group-modified MR-TADF emitters without a pronounced charge- transfer (CT) characteristic mixed in the lowest-lying fluorescent state, which might be helpful for the future design of narrowband OLED emitters.
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