期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 657, 期 -, 页码 90-94出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.10.079
关键词
Ceramics; Sintering; Dielectric response; Microstructure; High pressure
资金
- Foundation of National Key Laboratory of Shock Wave and Detonation Physics [9140C670101140C67280]
Pure and Al-doped ZnO ceramics were prepared by conventional sintering high pressure treated nano powders at 1150 degrees C for 2 h, and the effect of Al-doping on the microstructure and dielectric properties were mainly investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) results revealed that Al reacted with ZnO and formed ZnAl2O4 nano-precipitates on the grain boundaries. Small amount of ZnAl2O4 nano-precipitates (i.e. < 1 mol%) enhanced the grain growth of ZnO, while larger amount suppressed the grain growth. AC impedance analysis indicated that Al-doping decreases the resistivity of ZnO ceramics. Dielectric studies revealed that the incorporation of Al in ZnO can significantly enhance the dielectric constant (1.39 x 10(4) at 1 kHz) of ZnO ceramics. And the dielectric behavior can be well-explained by Maxwell-Wagner relaxation. (C) 2015 Elsevier B.V. All rights reserved.
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