GaN high electron mobility transistors with AlInN back barriers

GaN based high electron mobility transistor (HEMT) structures with AlInN back barriers are designed and investigated by Self-consistent Schrodinger-Poisson numerical simulation. An inserted AlInN back barrier is able to provide a good electron confinement and eliminate the parallel electron channel. It is shown that AlInN ternary alloy is a proper choice for back barrier material since the Al composition can be modulated to get not only a positive polarization to raise up the conduction band of GaN buffer but also a broader band gap than GaN's to avoid forming a potential well. (C) 2015 Elsevier B.V. All rights reserved.