期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 662, 期 -, 页码 16-19出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2015.12.031
关键词
GaN; HEMT; 2DEG; Back barrier
资金
- National Natural Science Foundation of China [61474110, 61377020, 61376089, 61223005, 61176126]
- National Science Fund for Distinguished Young Scholars [60925017]
- Basic Research Project of Jiangsu Province [BK20130362]
- One Hundred Person Project of the Chinese Academy of Sciences
GaN based high electron mobility transistor (HEMT) structures with AlInN back barriers are designed and investigated by Self-consistent Schrodinger-Poisson numerical simulation. An inserted AlInN back barrier is able to provide a good electron confinement and eliminate the parallel electron channel. It is shown that AlInN ternary alloy is a proper choice for back barrier material since the Al composition can be modulated to get not only a positive polarization to raise up the conduction band of GaN buffer but also a broader band gap than GaN's to avoid forming a potential well. (C) 2015 Elsevier B.V. All rights reserved.
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