期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 682, 期 -, 页码 785-790出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.04.308
关键词
Thermoelectric; SnSe; Hybridization; Band renormalization
资金
- Nano-Material Technology Development Program through the National Research Foundation of Korea (NRF) - Ministry of Education, Science and Technology [2011-0030147]
- Energy Efficiency AMP
- Resources program of the Korea Institute of Energy Technology Evaluation and Planning(KETEP) grant - Korea government Ministry of Knowledge Economy [20112010100100]
- LG Electronics
- National Research Foundation of Korea [22A20130000025, 2011-0030147] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Recent investigations of the high thermoelectric figure-of-merit ZT of 2.6 for SnSe crystalline compound demonstrated the state-of-the-art highest thermoelectric performance in spite of the high ZT value in a narrow temperature range and along a specified crystallographic direction. We investigated the thermoelectric properties of polycrystalline Sn1-xInxSe (x = 0.0, 0.01, 0.05, and 0.1) compounds and the optical properties of single crystalline compounds. Sn1-xInxSe exhibits increased electrical resistivity, an increase in the Seebeck coefficient and band gap energies, and a significant decrease in the Hall mobility with an increase in the In-doping concentration, whereas the Hall carrier density does not changed significantly. These abnormal results and the decrease in the lattice volume with an increase in the Indoping concentration strongly imply the existence of band renormalization by In 4d- and Se 4p-orbital hybridization. We argue that the significant flat bands by band renormalization induce significantly decreased Hall mobility and increases in the electrical resistivity and Seebeck coefficient, resulting in the deterioration of the thermoelectric properties. (C) 2016 Elsevier B.V. All rights reserved.
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