期刊
JOURNAL OF NON-CRYSTALLINE SOLIDS
卷 580, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jnoncrysol.2022.121409
关键词
Tungsten oxide; Oxygen vacancy; DC reactive sputtering; Thin films; Water oxidation
资金
- Interdisciplinary Research Center for Hydrogen and Energy Storage (IRC-HES), King Fahd University of Petroleum and Minerals (KFUPM)
- Deanship of Scientific Research (DSR) at King Fahd University of Petroleum & Minerals (KFUPM) [DF181021]
The preparation of non-crystalline tungsten oxide films using DC reactive sputtering technique with controlled oxygen flow rate was reported. The study revealed a correlation between photoelectrocatalytic activity, optical band gap, morphology, and oxygen content of the non-stoichiometric films.
The preparation of metal oxide semiconductors in non-stoichiometric (oxygen-deficient) form can lead to sig-nificant change in their optical and electronic properties, and hence affect the photoelectrochemical perfor-mance. The controlled introduction of oxygen vacancy can improve the charge separation and increases the charge carrier density, which can significantly contribute to the enhancement of photoelectrocatalytic activity. Herein, we report fabrication of non-crystalline tungsten oxide films from metallic tungsten target using DC reactive sputtering technique. The oxygen flow rate was regulated to control the composition, structure and morphology of the films. The as-prepared films are amorphous in nature with distinct surface morphology and optical properties. The presence of oxygen vacancies were confirmed by the surface analysis. The non-stoichiometric films were evaluated for PEC performance by monitoring the water oxidation reaction under the UV-visible radiation. The findings reveal a correlation between photoelectrocatalytic activity, optical band gap, morphology, and, more importantly, oxygen content of the films.
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