Estimating the Switching phenomenon for Se98Te2 and Se96Te2X2 (X=Zn or Cd) Chalcogenide glasses.

The switching behavior was investigated for Se98Te2 and Se96Te2X2 (X= Zn or Cd) Chalcogenide glasses in thin film form. The thermal evaporation process was used for the preparation of the film samples. I _ V curves were investigated in the thickness range (200-670 nm) and temperature range (293-318 K). The I _ V curves show a memory switch. The values of threshold voltage (Vth) found to decrease with the addition of Zn and Cd to Se98Te2 respectively. Also, the threshold voltage (Vth) values decrease exponentially with increasing temperature and increase with thickness. The ratio between the threshold voltage activation energy & UDelta;epsilon th and dc electrical activation energy delta E-sigma for the studied compositions suggests the explanation of the switching process by the electrothermal model. The threshold electric field Eth values were obtained and show an inverse relation with temperature for our studied system. The effect of Cd and Zn addition to Se98Te2 on the obtained parameters was also explained.

Automated summary

Investigations on the switching behavior of chalcogenide glasses in thin film form showed that the threshold voltage decreases with the addition of Zn and Cd to Se98Te2, and exponentially decreases with increasing temperature while increasing with thickness.