4.7 Article

Enhanced gas sensing properties of SnO2: The role of the oxygen defects induced by quenching

期刊

JOURNAL OF ALLOYS AND COMPOUNDS
卷 669, 期 -, 页码 29-37

出版社

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.01.225

关键词

Oxide materials; Semiconductors; Quenching; Dielectric response

资金

  1. National Natural Science Foundation [51402234]
  2. Natural Science Basic Research Plan in Shaanxi Province of China [2015JQ5142, 2015JQ5198]
  3. Principal Fund from Xi'an Technological University [XAGDXJJ1402]
  4. Dean Foundation from Xi'an Technological University [14GDYJY01]

向作者/读者索取更多资源

Oxygen defects have been considered to play an important role on the gas sensing properties of the sensor. In this work, oxygen vacancies are produced by quenching the commercial SnO2 and characterized by the X-ray photoelectron spectroscopy (XPS), adsorption and impedance spectra. Impedance spectra indicate that the quenched samples have a significant increase in conductivities, as well as a large reduction in activation energy from 1.14(1) to 0.20(1) eV, with the quenching temperature increasing. Furthermore, the gas sensors based on quenched SnO2 are prepared and gas sensing experiments give strong evidence that the oxygen vacancies enhance the sensor performances. By increasing the concentration of oxygen vacancies, the sensor displays a higher response toward ethanol (100 ppm) at 300 degrees C. (C) 2016 Elsevier B.V. All rights reserved.

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