期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 669, 期 -, 页码 29-37出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.01.225
关键词
Oxide materials; Semiconductors; Quenching; Dielectric response
资金
- National Natural Science Foundation [51402234]
- Natural Science Basic Research Plan in Shaanxi Province of China [2015JQ5142, 2015JQ5198]
- Principal Fund from Xi'an Technological University [XAGDXJJ1402]
- Dean Foundation from Xi'an Technological University [14GDYJY01]
Oxygen defects have been considered to play an important role on the gas sensing properties of the sensor. In this work, oxygen vacancies are produced by quenching the commercial SnO2 and characterized by the X-ray photoelectron spectroscopy (XPS), adsorption and impedance spectra. Impedance spectra indicate that the quenched samples have a significant increase in conductivities, as well as a large reduction in activation energy from 1.14(1) to 0.20(1) eV, with the quenching temperature increasing. Furthermore, the gas sensors based on quenched SnO2 are prepared and gas sensing experiments give strong evidence that the oxygen vacancies enhance the sensor performances. By increasing the concentration of oxygen vacancies, the sensor displays a higher response toward ethanol (100 ppm) at 300 degrees C. (C) 2016 Elsevier B.V. All rights reserved.
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