Stress engineered SU-8 dielectric-microbridge based polymer MEMS Pirani gauge for broad range hermetic characterization

The paper introduces a SU-8 dielectric mu-bridge based polymer microelectromechanical systems (MEMS) Pirani gauge which can be employed for hermetic characterization of packaged electronic sensors. The mu-bridge structure is adopted due to its simplicity in fabrication and lower footprint, which makes it feasible for heterogeneous integration. Further, the integration of SU-8 polymer with the active thermistor offers superior thermal isolation from the substrate and extends the dynamic range. Before fabricating the actual device, the SU-8 based mu-bridge is optimized for stress-free release. A stress engineering is performed and thermal processing of SU-8 is optimized. The measurement results reveal that the removal of quenching from the baking steps leads to the successful fabrication of freely suspended mu-bridge with SU-8 polymer as a structural layer. A quantitative comparison of the proposed gauge is established by comparing the gauge performance with conventional dielectric materials like silicon dioxide (SiO2), silicon nitride (Si3N4), and aluminum oxide (Al2O3). The fabricated SU-8 polymer-based MEMS Pirani gauge with a 40 mu m x 7 mu m footprint can be used for hermetic characterization from 30 Pa to 10(5) Pa and is an ideal candidate for heterogeneous integration.

Automated summary

This paper introduces a SU-8 dielectric mu-bridge based polymer microelectromechanical systems (MEMS) Pirani gauge for hermetic characterization of packaged electronic sensors. The gauge achieves simplicity in fabrication, lower footprint, and superior thermal isolation from the substrate.