期刊
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
卷 33, 期 17, 页码 13939-13946出版社
SPRINGER
DOI: 10.1007/s10854-022-08324-4
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资金
- Open Fund for National Key Laboratory of Science and Technology on Underwater Acoustic Antagonizing [JCKY2020207CH02]
- Original exploration project of Shanghai Natural Science Foundation [22ZR1481100]
- National Natural Science Foundation of China [51872180, 51672169]
Ferroelectric films of BFM-PT were successfully fabricated on LNO-coated stainless steel substrates with different thicknesses using a sol-gel process. The films exhibited single perovskite structure, smooth surface, increased polarization and dielectric constant with thickness, and changed conduction mechanism with thickness increase, maintaining excellent dielectric and ferroelectric properties.
In this paper, ferroelectric films of 0.7Bi(Fe0.98Mn0.02)O-3-0.3PbTiO(3) (BFM-PT) on LaNiO3 (LNO)-coated stainless steel (SS) substrates with different thicknesses were fabricated by sol-gel process. X-Ray diffraction (XRD) patterns and Scanning electron microscopy (SEM) images reveal that such BFM-PT thin films show single perovskite structure and smooth surface without detected second phase. With the increase of film thickness, BFM-PT thin films exhibit increased maximum polarization (P-max) and dielectric constant (epsilon(r)), as well as reduced dielectric loss (tan delta) and leakage current density. The values of remanent polarization (P-r), epsilon(r) and tan delta (@ 10(3) Hz) for BFM-PT thin films with thickness of 1.2 mu m are 21.2 mu C/cm(2), 618 and 0.05, respectively. The conduction mechanism of the BFM-PT thin films at low electric field changes from space charge limited conduction (SCLC) to Ohmic conduction with the increase of film thickness. Our results indicate that BFM-PT thin films coated on SS substrates with LNO buffer layer maintain excellent dielectric and ferroelectric properties.
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