期刊
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
卷 102, 期 -, 页码 56-65出版社
JOURNAL MATER SCI TECHNOL
DOI: 10.1016/j.jmst.2021.06.029
关键词
Ni-Mn-Ga thin films; Magnetic field-induced variant reorientation; Magnetic domains; Magnetization process; Magneto-optical Kerr microscopy
资金
- National Natural Science Foun-dation of China [52071071]
- Liaoning Revitalization Talents Program [XLYC1802023]
- Fundamental Research Funds for the Central Universities of China [N2102006]
- Program of Introducing Talents of Discipline Innovation to Universities 2.0 (the 111 Project of China 2.0) [BP0719037]
In this study, the magnetic domain and microstructure evolution of epitaxial Ni-Mn-Ga thin films were investigated using wide-field magneto-optical Kerr microscopy. The results showed that the abrupt magnetization changes in the hysteresis loops should be attributed to the magnetic domain evolution.
Epitaxial Ni-Mn-Ga thin films have promising application potential in micro-electro-mechanical sensing and actuation systems. To date, large abrupt magnetization changes have been observed in some epitaxial Ni-Mn-Ga thin films, but their origin either from magnetically induced martensite variant reorientation (MIR) or magnetic domain evolution has been discussed controversially. In the present work, we investigated the evolutions of the magnetic domain and microstructure of a typical epitaxial Ni-Mn-Ga thin film through wide-field magneto-optical Kerr-microscopy. It is demonstrated that the abrupt magnetization changes in the hysteresis loops should be attributed to the magnetic domain evolution instead of the MIR. (c) 2022 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
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