期刊
JOURNAL OF MATERIALS SCIENCE
卷 57, 期 10, 页码 5873-5884出版社
SPRINGER
DOI: 10.1007/s10853-022-06904-7
关键词
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资金
- National Natural Science Foundation of China [11804075, 11874013]
- Natural Science Foundation of Hebei Province [A2019202015]
- Foundation for the Top Talents in Universities in Hebei Province [SLRC2019024]
This research successfully synthesized H-phase VS2 atomic layers with different morphologies and stacking orders, and discovered their semiconductor characteristic. The interlayer interactions are stacking-dependent, while the intralayer interaction is two orders of magnitude larger than the interlayer interaction. The shear modulus and magnetic behavior of the VS2 film are also investigated.
Recently, the research of two-dimensional layered transition metal dichalcogenides has made great progress due to their high potential in advanced electronic devices. In this work, H-phase VS2 atomic layers with different morphologies and stacking orders were successfully synthesized on sapphire via chemical vapor deposition. The H-phase VS2 shows semiconductor characteristic with its valence band maximum located similar to 0.25 eV below the Fermi level. Interlayer many-body interactions are strongly stacking-dependent, leading to distinguished intensity ratio between the breathing and shear modes, 2.99 +/- 0.94 for AA, and 1.72 +/- 0.26 for AB stacking. The intralayer S-Vinteraction (force constant: 2.80-3.54 x 10(21) N/m(3)) is two orders of magnitude larger than the interlayer S-S interaction (force constant: 1.98-6.70 x 10(19) N/m(3)). The shear modulus is further derived to be similar to 12.8 GPa, similar to 30% smaller than that of MoS2. The prepared VS2 film exhibits obvious magnetic behavior at room temperature with the attenuation distance of similar to 16-25 nm in out-of-plane direction. The morphology dependent magnetism and stability investigations indicate that the measured magnetic behaviors of the sample have a certain degree of extrinsic contributions, which may settle down some experimental controversies about the magnetic behaviors in this specific system.
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