Efficient spin pumping into metallic SrVO3 epitaxial films

Spin pumping across interfaces between metallic SrVO3, where V is a 3d(1) ion, epitaxial thin films and ferromagnetic Ni80Fe20 is reported. Data shows an efficient spin pumping with a spin mixing conductance value (g(up down arrow) = 11.8 x 10(18) m(-2)) similar to that reported in metallic Vanadium but significantly larger than that measured in isoelectronic (3d(1)) VO2, which displays a Mott transition. Data are rationalized in terms of the relevance of density of states at the Fermi level and the relative strength of electron-electron correlations and electron-lattice coupling as toggles to tune spin-mixing conductance across interfaces.

Automated summary

Spin pumping across interfaces between metallic SrVO3 and ferromagnetic Ni80Fe20 is reported. The data shows an efficient spin pumping process, with a significantly higher spin mixing conductance value compared to metallic Vanadium and isoelectronic VO2. The results can be rationalized in terms of the density of states at the Fermi level and the relative strength of electron-electron correlations and electron-lattice coupling.