The negative interface capacitance and its anisotropy in magnetic tunnel junctions

The capacitance of magnetic tunnel junctions (MTJs) with the tunneling magnetocapacitance (TMC) effect has drawn lots of attention but there is still a lack of research on the capacitance anisotropy. In this work, a study of the capacitance in MgO-based MTJ is performed. The negative capacitance is observed and indicates the importance of interface capacitance in the MTJ. In further research, the interface capacitance depends on the relative orientation of magnetization in the two ferromagnetic layers (FMs), exhibiting a strong anisotropy. The Debye-Fro & BULL;hlich model combined with the magnetization dependence of relaxation time is introduced to explain the behavior. Theory and experiment results of the relaxation time as a function of the relative angle of the two FM magnetizations are well fitted. It reveals that the TMC originates from the interface charge accumulation and spin-dependent tunneling. All the results suggest that the interface capacitance with apparent anisotropy plays an essential role in the TMC.

Automated summary

The capacitance anisotropy of magnetic tunnel junctions (MTJs) has been a topic of interest. This study investigates the capacitance in MgO-based MTJs and reveals the significant role of interface capacitance and its anisotropy in the tunneling magnetocapacitance (TMC) effect.