期刊
JOURNAL OF LUMINESCENCE
卷 244, 期 -, 页码 -出版社
ELSEVIER
DOI: 10.1016/j.jlumin.2021.118716
关键词
Laser mode locking; Laser Q-switching; Saturable absorbers; GaSb film; Pulsed lasers
类别
资金
- National Natural Science Foundation of China [61905148, 12074264, 61775146]
- Shenzhen Science and Technology Project [JCYJ20190808160205460, JCYJ20190808174201658]
- State Key Laboratory of Advanced Optical Communication Systems and Networks of Shanghai Jiaotong University
In this paper, a broadband optical-intensity modulator using magnetron-sputtered GaSb thin film is reported, which enables pulse generation in different wavelength ranges and shows great potential for nonlinear optical applications.
Material with nonlinear response to light intensity, i.e., the saturable absorber, is an important mean to realize pulsed lasers which have wide applications in many fields. In this paper, we report a broadband optical-intensity modulator, magnetron-sputtered GaSb thin film, for pulse generation from C-band to mid-infrared regions. By the virtue of GaSb thin film, soliton pulses with 308 fs/585 fs pulse width and 17.82 mW/64.69 mW output power were obtained at 1559 nm/1902 nm in an Er-doped fiber laser (EDFL) and a Tm-doped fiber laser (TDFL) respectively. Furthermore, GaSb thin film coated on a gold mirror was successfully used to achieve 2783 nm Q switching operation of a Er3+:ZBLAN fiber laser with a maximum output power of 420 mW. With such a wide operation wavelength range, GaSb thin film is of great potential for many nonlinear optical applications.
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