期刊
JOURNAL OF ALLOYS AND COMPOUNDS
卷 689, 期 -, 页码 302-306出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2016.07.331
关键词
1T-HfS2 monolayers; n- and p-type impurities; Transition energy level
资金
- National Natural Science Foundation of China (NSFC) [11504092]
- National Undergraduate Training Programs for Innovation and Entrepreneurship [201510476043]
- Natural science foundation research project of education department of Henan province [2011A140018]
- Science and technology research key project of education department of Henan province [14A140012]
- High Performance Computing Center of Henan Normal University
We explored the characteristics of n- and p-type impurities by means of group V and VII atoms substituting sulfur in 1T-HfS2 monolayer using the first-principles calculation. Numerical results show that the formation energy increases with the increasing impurity atom size for each considered doping case, and the formation energy calculations also indicate that it is energy favorably and relatively easier to incorporate these atoms into the HfS2 under Hf-rich experimental conditions. Meanwhile, with increasing atomic size, the transition energy levels increase for group V atoms substitution. While the transition energy levels decrease with increasing atomic size for group VII atoms substitution. The calculations of the transition energy level indicate that the N-doped HfS2 monolayer has the lowest formation energy and the shallowest transition level among the p-doped HfS2 monolayer systems. (C) 2016 Elsevier B.V. All rights reserved.
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