4.4 Article

Development and validation of a thermal simulation for the Czochralski crystal growth process using model experiments

相关参考文献

注意:仅列出部分参考文献,下载原文获取全部文献信息。
Article Crystallography

A modified hypothesis of Reynolds stress tensor modeling for mixed turbulent convection in crystal growth

Vladimir Kalaev et al.

Summary: This study provides a numerical investigation of turbulent melt convection during 100 mm diameter Si Cz growth using implicit large eddy simulation. The use of refined time step and material properties improves the accuracy of calculated temperature profiles along the melt/crucible interface. The modified hypothesis of Reynolds stress tensor modeling successfully reproduces the qualitative and quantitative details of the reference Reynolds stress tensor distributions.

JOURNAL OF CRYSTAL GROWTH (2022)

Article Thermodynamics

3D unsteady and steady modeling of heat and mass transfer during Cz Si crystal growth with a horizontal magnetic field

A. Kondratyev et al.

Summary: The research uses LES/RANS approach to model Cz silicon growth, showing good agreement with experimental data and industrial furnace simulations, accurately predicting interface shape, temperature, and melt parameters. The study finds that crystal rotation rate affects interface shape and oxygen concentration.

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER (2021)

Article Crystallography

ILES of melt turbulent convection with conjugated heat transfer in the crucible and gas flow for Czochralski silicon crystal growth system

Dmitry Borisov et al.

Summary: The Implicit Large Eddy Simulation (ILES) results of turbulent melt convection driven by buoyancy, rotation, and surface tension during Czochralski silicon crystal growth are presented. Significant anisotropy of melt velocity fluctuations and important temperature fluctuation intensity along the liquid/solid interface were observed. The study also evaluated the accuracy of conventional turbulence models and approximations of production terms and dissipation rate for Si melt turbulent convection.

JOURNAL OF CRYSTAL GROWTH (2021)

Article Crystallography

Control of Oxygen Impurities in a Continuous-Feeding Czochralski-Silicon Crystal Growth by the Double-Crucible Method

Wenhan Zhao et al.

Summary: The continuous-feeding Czochralski method is a cost-effective way to grow single silicon crystals. The inner crucible plays a more important role in affecting the oxygen concentration at the melt-crystal interface than the outer crucible. Enlarging the inner crucible diameter can help control the oxygen concentration at the melt-crystal interface.

CRYSTALS (2021)

Article Crystallography

Evaluation of the Performance of Published Point Defect Parameter Sets in Cone and Body Phase of a 300 mm Czochralski Silicon Crystal

Andrejs Sabanskis et al.

Summary: The prediction and adjustment of point defect distribution in silicon crystals is crucial for microelectronic applications. Simulation of growth processes using different point defect parameter sets is found to be effective, with models considering the impact of thermal stress showing the best agreement in the whole crystal.

CRYSTALS (2021)

Article Crystallography

Numerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single Crystals

Klaus Bottcher et al.

Summary: The numerical analysis of NdScO3 single crystal growth in the [110] direction using the Czochralski method revealed significant influence of optical thickness variations on the crystal-melt interface and thermal stress generation. Absorption coefficients in the range of 40 to 200 m(-1) showed closer alignment with experimental values for the deflection of the crystal/melt interface. Additionally, applying absorption coefficients between 3 and 100 m(-1) resulted in localized high temperature peaks in specific regions of the crystal.

CRYSTAL RESEARCH AND TECHNOLOGY (2021)

Article Crystallography

Model Experiments for Flow Phenomena in Crystal Growth

Kaspars Dadzis et al.

CRYSTAL RESEARCH AND TECHNOLOGY (2020)

Article Crystallography

Computer modeling of HMCz Si growth

Vladimir Kalaev

JOURNAL OF CRYSTAL GROWTH (2020)

Article Mechanics

Mechanics of Growing and Heat Treatment Processes of Monocrystalline Silicon

N. A. Verezub et al.

MECHANICS OF SOLIDS (2020)

Article Crystallography

Comparison of thermal stress computations in Czochralski and Kyropoulos growth of sapphire crystals

Carmen Steilan et al.

JOURNAL OF CRYSTAL GROWTH (2018)

Article Crystallography

Validation, verification, and benchmarking of crystal growth simulations

K. Dadzis et al.

JOURNAL OF CRYSTAL GROWTH (2017)

Article Crystallography

Numerical Modelling of the Czochralski Growth of ß-Ga2O3

Wolfram Miller et al.

CRYSTALS (2017)

Article Crystallography

Modeling Interface Shape in Czochralski Growth of Sapphire Crystals

Carmen Stelian et al.

CRYSTAL RESEARCH AND TECHNOLOGY (2017)

Article Crystallography

Crystal twisting in Cz Si growth

Vladimir Kalaev et al.

JOURNAL OF CRYSTAL GROWTH (2015)

Article Crystallography

Advanced chemical model for analysis of Cz and DS Si-crystal growth

A. N. Vorob'ev et al.

JOURNAL OF CRYSTAL GROWTH (2014)

Article Crystallography

The role of inner and internal radiation on the melt growth of sapphire crystal

Mohammad Hossein Tavakoli et al.

CRYSTAL RESEARCH AND TECHNOLOGY (2013)

Article Crystallography

Global simulation of the Czochralski silicon crystal growth in ANSYS FLUENT

Maksims Kirpo

JOURNAL OF CRYSTAL GROWTH (2013)

Article Crystallography

Crystal shape 2D modeling for transient CZ silicon crystal growth

A. Sabanskis et al.

JOURNAL OF CRYSTAL GROWTH (2013)

Article Crystallography

Numerical study on double-frequency TMF in Cz silicon growth

N. Dropka et al.

CRYSTAL RESEARCH AND TECHNOLOGY (2012)

Article Mathematics, Applied

Mathematical Modeling of Czochralski Type Growth Processes for Semiconductor Bulk Single Crystals

W. Dreyer et al.

MILAN JOURNAL OF MATHEMATICS (2012)

Article Crystallography

3D unsteady computer modeling of industrial scale Ky and Cz sapphire crystal growth

S. E. Demina et al.

JOURNAL OF CRYSTAL GROWTH (2011)

Proceedings Paper Engineering, Electrical & Electronic

Application of double crucible in Cz Si crystal growth

A. Prostomolotov et al.

GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV (2011)

Article Physics, Condensed Matter

Numerical simulations of bulk crystal growth on different scales: silicon and GeSi

Wolfram Miller

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2010)

Article Engineering, Multidisciplinary

Gmsh: A 3-D finite element mesh generator with built-in pre- and post-processing facilities

Christophe Geuzaine et al.

INTERNATIONAL JOURNAL FOR NUMERICAL METHODS IN ENGINEERING (2009)

Article Thermodynamics

An investigation of the influence of natural convection on tin solidification using a quasi two-dimensional experimental benchmark

Xiaodong Wang et al.

INTERNATIONAL JOURNAL OF HEAT AND MASS TRANSFER (2009)

Article Chemistry, Multidisciplinary

Modeling of induction heating in oxide Czochralski systems-advantages and problems

Mohammad Hossein Tavakoli

CRYSTAL GROWTH & DESIGN (2008)

Article Crystallography

Two and three-dimensional numerical modeling of induction heating in oxide Czochralski systems

M. H. Tavakoli et al.

CRYSTAL RESEARCH AND TECHNOLOGY (2008)

Article Crystallography

Optimization of furnace design and growth parameters for Si Cz growth, using numerical simulation

O. V. Smirnova et al.

JOURNAL OF CRYSTAL GROWTH (2008)

Article Crystallography

Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method

S. E. Demina et al.

JOURNAL OF CRYSTAL GROWTH (2008)

Article Crystallography

Development of oxygen transport model in Czochralski growth of silicon crystals

A. D. Smirnov et al.

JOURNAL OF CRYSTAL GROWTH (2008)

Review Materials Science, Multidisciplinary

Progress in modeling of fluid flows in crystal growth processes

Qisheng Chen et al.

PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL (2008)

Article Crystallography

A new hybrid method for the global modeling of convection in CZ crystal growth configurations

J. Fainberg et al.

JOURNAL OF CRYSTAL GROWTH (2007)

Review Engineering, Chemical

Recent progress of crystal growth modeling and growth control

CW Lan

CHEMICAL ENGINEERING SCIENCE (2004)

Article Crystallography

Challenges in modeling of bulk crystal growth

G Müller et al.

JOURNAL OF CRYSTAL GROWTH (2004)

Article Crystallography

Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations

VV Kalaev et al.

JOURNAL OF CRYSTAL GROWTH (2003)

Article Crystallography

Gas flow effect on global heat transport and melt convection in Czochralski silicon growth

VV Kalaev et al.

JOURNAL OF CRYSTAL GROWTH (2003)

Article Crystallography

Simulation of large-scale silicon melt flow in magnetic Czochralski growth

V Savolainen et al.

JOURNAL OF CRYSTAL GROWTH (2002)

Article Engineering, Electrical & Electronic

Effects of various magnetic field configurations on temperature distributions in Czochralski silicon melts

O Gräbner et al.

MICROELECTRONIC ENGINEERING (2001)

Article Thermodynamics

Thermal conductivity of liquid tin and indium

MV Peralta-Martinez et al.

INTERNATIONAL JOURNAL OF THERMOPHYSICS (2001)