相关参考文献
注意：仅列出部分参考文献，下载原文获取全部文献信息。Analysis of GaAsBi growth regimes in high resolution with respect to As/Ga ratio using stationary MBE growth
J. Puustinen et al.
JOURNAL OF CRYSTAL GROWTH (2019)
Spontaneous nanostructure formation in GaAsBi alloys
C. Ryan Tait et al.
JOURNAL OF CRYSTAL GROWTH (2018)
Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM
N. Balades et al.
NANOSCALE RESEARCH LETTERS (2018)
Temperature dependence of band gaps in dilute bismides
W. M. Linhart et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2018)
Analysis of Bi Distribution in Epitaxial GaAsBi by Aberration-Corrected HAADF-STEM
N. Balades et al.
NANOSCALE RESEARCH LETTERS (2018)
Progress Toward III-V Bismide Alloys for Near- and Midinfrared Laser Diodes
Igor P. Marko et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2017)
Surface kinetics study of metal-organic vapor phase epitaxy of GaAs1-yBiy on offcut and mesa-patterned GaAs substrates
Yingxin Guan et al.
JOURNAL OF CRYSTAL GROWTH (2017)
Quantum Dot Self-Assembly Driven by a Surfactant-Induced Morphological Instability
Ryan B. Lewis et al.
PHYSICAL REVIEW LETTERS (2017)
Predictive modeling of low solubility semiconductor alloys
Garrett V. Rodriguez et al.
JOURNAL OF APPLIED PHYSICS (2016)
Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices
P. T. Webster et al.
JOURNAL OF APPLIED PHYSICS (2016)
Calculation of In-As-Bi ternary phase diagram
N. Elayech et al.
VACUUM (2016)
Increased InAs quantum dot size and density using bismuth as a surfactant
Vaishno D. Dasika et al.
APPLIED PHYSICS LETTERS (2014)
Observation of atomic ordering of triple-period-A and -B type in GaAsBi
Mingjian Wu et al.
APPLIED PHYSICS LETTERS (2014)
Molecular beam epitaxy growth of GaAsBi using As2 and As4
Robert D. Richards et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Atmospheric-pressure metal organic vapor-phase epitaxy of GaAsBi alloys on high-index GaAs substrates
I. Zaied et al.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS (2014)
Surface reconstructions during growth of GaAs1-xBix alloys by molecular beam epitaxy
M. Masnadi-Shirazi et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Kinetically limited growth of GaAsBi by molecular-beam epitaxy
A. J. Ptak et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Atomic ordering and phase separation in MBE GaAs1-xBix
Andrew G. Norman et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (2011)
Growth and properties of the dilute bismide semiconductor GaAs1-xBix a complementary alloy to the dilute nitrides
T. Tiedje et al.
INTERNATIONAL JOURNAL OF NANOTECHNOLOGY (2008)
Giant spin-orbit bowing in GaAs1-xBix
B. Fluegel et al.
PHYSICAL REVIEW LETTERS (2006)
Sb and Bi surfactant effects on homo-epitaxy of GaAs on (001) patterned substrates
RR Wixom et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Temperature dependence of GaAs1-xBix band gap studied by photoreflectance spectroscopy
J Yoshida et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2003)
The Asaro-Tiller-Grinfeld instability revisited
A Danescu
INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES (2001)
分享论文
