Effects of different partition depths on heat and oxygen transport during continuous Czochralski (CCz) silicon crystal growth

A series of quasi-steady numerical simulations of the CCz growth of 8-in.-diameter silicon crystals are performed. A quartz partition is installed inside the melt to prevent the solid silicon that is being continuously added during growth from being transported to the crystal-melt interface without being melted. The effects of different partition depths on the heat, flow, and oxygen distributions are investigated. The simulation results show that the oxygen content increases when the depth of partition is increased from 20 mm to 80 mm. The trend is reversed for higher partition depths. This is due to the variation in the thermal field and flow structure. As the depth of the partition increases, there is a more significant change in the velocity under the free surface of the melt in the region inside the partition than in the outer melt region.

Automated summary

A series of quasi-steady numerical simulations are conducted to investigate the effects of different partition depths on the growth of 8-inch-diameter silicon crystals using the CCz method. The results show that the oxygen content increases with increasing partition depth up to a certain point, but reverses for higher partition depths.